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Your search returned 25 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2000 Volume number : 47 Issue: 01 |
A Unified Simulation Of Schottky And Ohmic Contacts
(Article)
Subject:
Device Simulation
,
Ohmic Loss
,
Schottky
Author:
Kazuya
Matsuzawa
Ken
Uchida
Akira
Nishiyama
page:
103
-
108
Dynamic-Stress-Induced Enhanced Degradation Of 1/F Noise In N-Mosfet'S
(Article)
Subject:
Nitridation
,
Dynamic Stresses
,
Mosfet
Author:
J. P.
Xu
Y.C.
Cheng
page:
109
-
112
A Simple Yet Comprehensive Unified Phsysical Model Of The 2-D Electron Gas In Delt-Doped Doped And Uniformly Doped High Electron Mobility Transistors
(Article)
Subject:
Analytic Model
,
Charge Control
,
Hemt
Author:
G.
Ramesh
S.
Karmalkar
page:
11
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23
Exploring The Novel Characteristics Of Heteero-Material Gate Field-Effect Transistors (Hmgfet'S) With Gate-Material Engineering
(Article)
Subject:
Asymmetric Mosfet
,
Asymmetric Spacer
,
Drain-Induced Barrier-Lowering
Author:
Xing
Zhou
page:
113
-
120
Electrical Conduction And Dielectric Breakdown In Aluminum Oxide Insulators On Silicon
(Article)
Subject:
Dielectric Breakdown
,
Semiconductor Dbr
,
Mos Capacitor
Author:
James
Kolodzey
Shong-Chin
Chen
Johnson Olufemi
Olowolafe
page:
121
-
128
A New On-Chip Interconnectcrosstalk Model And Experimental Verification For Cmos Vlsi Circuit Design
(Article)
Subject:
Crosstalk
,
Distributed-Model
,
Interconnect
Author:
Yungseon
Eo
William R.
Eisenstadt
Oh-Kyong
Kwon
Ju Young
Jeong
page:
129
-
140
Effects Of The Inversion-Layer Centroid On The Performance Of Double-Gate Mosfet'S
(Article)
Subject:
Charge Carrier Density
,
Inversion Layers
,
Mosfets
Author:
A.
Lopez-Villanueva
Francisco
Gamiz
Alberto J.
Palma
page:
141
-
146
Fabrication Method For Ic-Oriented Si Single-Electron Transistors
(Article)
Subject:
Mosfet
,
Nanotechnology
,
Quantum Dots
,
Silicon
Author:
Yukinori
Ono
K
Yamazaki
page:
147
-
153
A New Model For The Description Of Gate Voltage And Temperature Dependence Of Gate Induced Drain Leakage (Gidl) In The Low Eleectric Field Region
(Article)
Subject:
Temperature Dependence
,
Trap-Assisted Carrier Generation
,
Voltage Detection
Author:
Markus
Rosar
Bernard
Leroy
Giorio
Schweeger
page:
154
-
159
Mosfet Channel Length Extraction And Interpretion
(Article)
Subject:
Integrated Circuit
,
Mosfets
,
Semiconductor Devices
Author:
Yuan
Taur
page:
160
-
170
A Comprehensive Study Of Hot-Carrier Induced Interface And Oxide Trap Distributions In Mosfet'S Using A Novel Charge Pumping Technique
(Article)
Subject:
Charge Pumping
,
Hot-Carrier
,
Mosfet
Author:
S.
Mahapatra
Chetan D.
Parikh
Chand R.
Viswanathan
page:
17
-
177
Optimization Study Of Vlsi Interconnect Parameters
(Article)
Subject:
Intergrated Circuit Design
,
Integrated Circuit Metallization
Author:
M.
Anand
Masakazu
Kakumu
Hideki
Shibata
page:
178
-
186
Low Frequemcy Conductance Voltage Analysis Of Si/Ge Si Si Heterojunction Bipolar Transistors
(Article)
Subject:
Bipolar Transistor
,
Lifetime
,
Mobility
,
Transit Time
Author:
A.
Neugroschel
page:
187
-
196
Analysis Of Hot Carrier Transport In Algaas/Ingaas Pseudomorphic Hemt'S Bymeans Of Electroluminescence
(Article)
Subject:
Hot-Electron Injection
,
Impact Ionization
,
Ingaas
Author:
Gaudenzio
Meneghesso
Maura
Pavesi
Enrico
Zanoni
page:
2
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10
Barrier Height Engineering On Gaas Thz Schottky Diodes By Means Of High-Low Doping Ingaas Adn Ingap-Layers
(Article)
Subject:
Barrier Height
,
Schottky-Diode
,
Tunneling
Author:
Stefan
Sassen
Bernd
Witzigmann
Claus
Wolk
page:
24
-
32
Depletion- And Enhancement-Mode Modulation-Doped Field-Effect Transistors For Ultrahigh-Speed Applications An Electrochemicall Fabrication Technology
(Article)
Subject:
Electrochemical Process
,
High-Speed Circuits
,
Semiconductor Devices
Author:
Dong
Xu
T.
Suemitsu
Toshiaki
Tamamura
page:
33
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43
Compact And Conprehensive Database For Ion-Implanted As Profile
(Article)
Subject:
As(Iii)
,
Ion Implantation
,
Monte Carlo
Author:
Kunihiro
Suzuki
R
Sudo
Thomas
Feudel
page:
44
-
49
Study And Fabrication Of Pin Photodiode By Using Zn Se /Ps/ Si Structure
(Article)
Subject:
Photocurrent
,
Photodiode On Soi
,
Porous Silicon
Author:
Chung-Chieh
Chang
C. H
Lee
page:
50
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54
Performance Analysis Of Color Cmos Photogate Image Sensor
(Article)
Subject:
Active Pixel Sensors
,
Cmos Image Sensor
,
Color
Author:
A J
Blanksby
Marc J.
Loinaz
page:
55
-
64
A 1-Mm 50 K-Pixel It Ccd Image Sensor For Miniature Camera System
(Article)
Subject:
Charge Coupled Device
Author:
Keijirou
Itakura
Noboru
Kokusenya
Masuo
Ozaki
page:
65
-
70
Conduction Mechanisms In Barium Tantalates Films And Modification Of Interfacial Barrier Height
(Article)
Subject:
Dielectric Thin Films
,
Optoelectronics, Displays And Imaging
,
Conduction Mechabism
Author:
Yun-Hi
Lee
Dong-Ho
Kim
Bycong-Kwon
Ju
page:
71
-
76
Development Of Panel Structure For A High-Resolution 21-In-Diagonal Full-Color Surface-Discharge Plasma Disply Panel
(Article)
Subject:
Flat Panel Displays
,
Gas Discharge Displays
Author:
Masayuki
Wakitani
Shinji
Kanagu
Noriyuki
Awaji
Tsutae
Shinoda
page:
77
-
81
Soft Breakdon Conduction In Ultrathin (3-5 Nm) Gate Dielectrics
(Article)
Subject:
Charge Injection
,
Dielectric Breakdown
,
Leakage Currents
Author:
Enrique
Miranda
Jordi
Sune
Francesca
Campabadal
page:
82
-
89
Interconnect Scaling Scenario Using A Chip Level Interconnect Model
(Article)
Subject:
Chip Seal
,
Design Methodology
,
Interconnect
,
Scaling
Author:
K
Yamashita
Shinji
Odanaka
page:
90
-
96
A Steady Stated Drain Current Technique For Generation And Recombinaton Lifetime Measurement In The Soi Mosfet
(Article)
Subject:
Carrier Generation Lifetime
,
Fully-Depleted Soi Mosfet
,
Recombination Lifetime
,
Steady State
Author:
Zhi-Uuan
Cheng
C. H.
Ling
page:
97
-
102
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